gb2x100mps12 - 227 1200 v sic mps? diode feb 2018 rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ silicon carbide power schottky diode features ? high avalanche (uis) capability ? enhanced surge current capability ? 175 c maximum operating temperature ? temperature independent switching behavior ? positive temperature coefficient of v f ? extremely fast switching speeds ? superior figure of merit q c /i f advantages ? low standby power losses ? improved circuit efficiency (lower overall cost) ? low switching losses ? ease of paralleling devices w ithout thermal runaway ? smaller heat sink requirements ? low reverse recovery current ? low device capacitance ? low reverse leakage current a t operating temperature absolute maximum ratings parameter repetitive peak reverse voltage (per leg) continuous forward current (per leg/ per device) non-repetitive peak forward surge current, half sine wave (per leg) repetitive peak forward surge current, half sine wave (per leg) non-repetitive peak forward surge current (per leg) i 2 t value (per leg) non-repetitive avalanche energy (per leg) diode ruggedness (per leg) power dissipation (per leg/per device) operating and storage temperature electrical characteristics (per leg) parameter diode forward voltage reverse current total capacitive charge switching time total capacitance thermal / mechanical characteristics thermal resistance, junction C case (per leg) * per device, ** per leg http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ package sot - 227 applications overall cost) ithout thermal runaway t operating temperature ? power factor correction (pfc) ? switched- mode power supply (smps) ? solar inverters ? wind turbine inverters ? motor drives ? induction heating ? uninterruptible power supply (ups) ? high voltage multipliers symbol conditions values v rrm 1200 i f t c = 25 c, d = 1 204/ 408 t c = 132 c, d = 1 100/ 200 i f,sm t c = 25 c, t p = 10 ms 700 t c = 150 c, t p = 10 ms 550 i f,rm t c = 25 c, t p = 10 ms 400 t c = 150 c, t p = 10 ms 260 i f,max t c = 25 c, t p = 10 s 1800 i 2 dt t c = 25 c, t p = 10 ms 600 e as l = 0 mh, i av = 90 a, v dd = 60 v 800 dv/dt v r = 0 ~ 960 v 100 p tot t c = 25 c 770/ 1540 t j , t stg - 55 to 175 symbol conditions values min. typ. v f i f = 100 a, t j = 25 c 1.5 i f = 100 a, t j = 175 c 2.3 i r v r = 1200 v, t j = 25 c 10 v r = 1200 v, t j = 175 c 80 q c i f i f,max di f /dt = 200 a/s t j = 175 c v r = 400 v 374 v r = 800 v 557 t s v r = 400 v < 10 v r = 800 v c v r = 1 v, f = 1 mhz, t j = 25 c 6110 v r = 800 v, f = 1 mhz, t j = 25 c 409 r thjc 0.19 v rrm i f (tc = 132 c) q c 1 2 3 4 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ page 1 of 6 mode power supply (smps) values unit 1200 v 408 a 200 a a 1800 a a 2 s mj v/s 1540 w 55 to 175 c values unit max. 1.8 v 2.7 140 a 950 nc ns 6110 pf c/w = 1200 v c) = 200 a* = 1114n c*
gb2x100mps12 - 227 1200 v sic mps? diode feb 2018 rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ i f = f(v f ,t j ); t p = 300 s figure 1: typical forward characteristics leg) i r = f(v r ,t j ) figure 3: typical reverse characteristics leg) http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ s i f = f(v f ,t j ); t p = 300 figure 1: typical forward characteristics (per figure 2: typical high current forward characteristics (per leg) p tot = f(t j ) reverse characteristics (per figure 4: power derating curve http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ page 2 of 6 = 300 s figure 2: typical high current forward (per leg) power derating curve (per leg)
gb2x100mps12 - 227 1200 v sic mps? diode feb 2018 rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ i f = f(t c ); d = t p /t, t p = 10 s figure 5: current derating curves q c = f(v r ); t j = 25 c ; f = 1mhz figure 7: typical capacitive charge vs. reverse voltage characteristics http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ = 10 s c = f(v r ); t j = 25 c ; f = 1mhz figure 5: current derating curves (per leg) figure 6: typical junction capacitance vs reverse voltage characteristics ; f = 1mhz e c = f(v r ); t j = 25 c ; f = 1mhz figure 7: typical capacitive charge vs. characteristics (per leg) figure 8: typical capacitive energy vs. reverse voltage characteristics http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ page 3 of 6 ; f = 1mhz figure 6: typical junction capacitance vs reverse voltage characteristics (per leg) ; f = 1mhz figure 8: typical capacitive energy vs. characteristics (per leg)
gb2x100mps12 - 227 1200 v sic mps? diode feb 2018 rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ figure 9 : transient thermal impedance i f = f(v f , t j ) figure 10 : forward curve model http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ z th,jc = f(t p ,d); d = t p /t : transient thermal impedance (per leg) i f = (v f C v bi )/r built-in voltage (v v bi (t j ) = m*t j + b, m = -1.31e- 03, b = 0.912 differential resistance (r r diff (t j ) = a*t j 2 + b*t a = 5.84e- 05, b = 9.71e : forward curve model (per leg) http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ page 4 of 6 )/r diff voltage (v bi ): + b, 03, b = 0.912 differential resistance (r diff ): + b*t j + c (?); 05, b = 9.71e -03, c = 2.01
gb2x100mps12 - 227 1200 v sic mps? diode feb 2018 rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ package dimensions: sot - 227 note 1. controlled dimension is inch. dimension in bracket is millimeter. 2. dimensions do not include end flash, mold flash, material http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ package outline 1. controlled dimension is inch. dimension in bracket is millimeter. 2. dimensions do not include end flash, mold flash, material protrusions http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ page 5 of 6
gb2x100mps12 - 227 1200 v sic mps? diode copyright ? 2018 genesic semiconductor inc. all rights reserved the information in this document is subject to change without notice feb 2018 rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ rohs compliance the levels of rohs restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance 2011/65/ec (rohs2), as implemented january 2, 2013. rohs declarations for this product can be obtained from your genesic representative. reach compliance reach substances of high concern (svhcs) information is available for this product. since the european chemi (echa) has published notice of their intent to frequently revise the svhc listing for the foreseeable future, genesic repres entative to insure you get the most up information (reach article 67) is also available upon request. this product has not been designed or tested for use in, and is not intended for use in, applicati human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffic control systems. genesic disclaims all and any warranty and liability arising out of use or application of any product. no lic implied to any intellectual property rights is granted by this document. related links ? soldering document: http://www.genesicsemi.com/quality/quality ? tin-whisker report: http://www.genesicsemi.com/quality/compliance/ ? reliability report: http://www.genesicsemi.com/quality/reliability/ copyright ? 2018 genesic semiconductor inc. all rights reserved the information in this document is subject to change without notice 43670 trade center place http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ the levels of rohs restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance 2011/65/ec (rohs2), as implemented january 2, 2013. rohs declarations for this product can be obtained from your substances of high concern (svhcs) information is available for this product. since the european chemi (echa) has published notice of their intent to frequently revise the svhc listing for the foreseeable future, entative to insure you get the most up -to-date reach svhc declaration. reac article 67) is also available upon request. this product has not been designed or tested for use in, and is not intended for use in, applicati human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life - support machines, cardia defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air genesic disclaims all and any warranty and liability arising out of use or application of any product. no lic intellectual property rights is granted by this document. http://www.genesicsemi.com/quality/quality -manual/ http://www.genesicsemi.com/quality/compliance/ http://www.genesicsemi.com/quality/reliability/ published by genesic semiconductor, inc. 43670 trade center place suite 155 dulles, va 20166 page 6 of 6 the levels of rohs restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2011/65/ec (rohs2), as implemented january 2, 2013. rohs declarations for this product can be obtained from your substances of high concern (svhcs) information is available for this product. since the european chemi cal agency (echa) has published notice of their intent to frequently revise the svhc listing for the foreseeable future, please contact a svhc declaration. reac h banned substance this product has not been designed or tested for use in, and is not intended for use in, applicati ons implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, support machines, cardia c defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air genesic disclaims all and any warranty and liability arising out of use or application of any product. no lic ense, express or
gb2x100mps12 - 227 1200 v sic mps? diode feb 2018 rev1.1 http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ spice model parameters this is a s ecure document. please c opy this code from the spice ( http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/gb2x100mps12 227_spice.pdf ) into ltspice (vers * genesic semiconductor sic mps * revision: 1.1 * date: february-2018 ************************************************************************** ** sot-227 package ************************************************************************** .subckt gb2x100mps 12 a k case l_anode a ad 10 d1 ad case g l_cathode k case 10 .ends ***************************************** .subckt gb2x100mps 12 anode kathode d1 anode kathode gb2x10 0mps .model gb2x100mps 12_schottky d + is 8.72e- 15 + n 1 + eg 1.2 + trs1 0.005434 + cjo 8.52e-9 + m 0.438 + tt 1.00e-10 + ibv 10e-06 + iave 100 + mfg genesic_semi .ends * end of GB2X100MPS12-227 spice model ************************************************************************** * this model is provided "as is, where is, and with no warranty of any kind * either expressed or implied, including but not limited to any implied * warranties of merchantability a http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ this is a s ecure document. please c opy this code from the spice model pdf file on our website http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/gb2x100mps12 ) into ltspice (vers ion 4) software for simulation of the gb2x10 0mps genesic semiconductor sic mps tm rectifier ************************************************************************** ************************************************************************** 12 a k case 10 n d1 ad case g b2x100mps 10 n ***************************************** ********************************* 12 anode kathode 0mps 12_schottky 12_schottky d 15 rs 0.0062 ikf 500 xti 2 trs2 2.717e-05 vj 0.879 fc 0.5 bv 1200 vpk 1200 type sic_mps tm spice model ************************************************************************** this model is provided "as is, where is, and with no warranty of any kind * either expressed or implied, including but not limited to any implied * warranties of merchantability a nd fitness for a particular purpose." http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/ page 1 of 1 model pdf file on our website http://www.genesicsemi.com/sic_rectifiers_diodes/merged_pin_schottky/gb2x100mps12 - 0mps 12-227. ************************************************************************** ************************************************************************** ********************************* ************************************************************************** this model is provided "as is, where is, and with no warranty of any kind * either expressed or implied, including but not limited to any implied nd fitness for a particular purpose."
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